IRLR3110ZPbF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
Powiadom mnie gdy produkt będzie dostępny
SKU
IRLR3110ZPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

Zapytaj o ten produkt

Opis / IRLR3110ZPbF

Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 24
  • Inventory 3
  • PCNs 76
  • MaskPart IRLR3110ZPbF%
  • IntroductionDate Mar 09, 2006
  • EnablingEnergyEfficiency No
  • AliasParts SP001568530
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLR3110ZPbF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material Si
  • Maximum Continuous Drain Current (A) 63
  • Maximum Continuous Drain Current @ Temperature (A) 63@Tc=25C|45@Tc=100C|42@Tc=25C
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A) N/A
  • Maximum Diode Forward Voltage (V) 1.3
  • Maximum Drain Source Resistance (mOhm) 14@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 16@4.5V|14@10V
  • Maximum Drain Source Voltage (V) 100
  • Maximum Gate Resistance (Ohm) N/A
  • Maximum Gate Source Leakage Current (nA) 200
  • Maximum Gate Source Voltage (V) ±16
  • Maximum Gate Threshold Voltage (V) 2.5
  • Maximum IDSS (uA) 20
  • Maximum Junction Ambient Thermal Resistance 110°C/W
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 40
  • Maximum Junction Case Thermal Resistance 1.05°C/W
  • Maximum Operating Temperature (°C) 175
  • Maximum Positive Gate Source Voltage (V) 16
  • Maximum Power Dissipation (mW) 140000
  • Maximum Power Dissipation on PCB @ TC=25°C (W) N/A
  • Maximum Pulsed Drain Current @ TC=25°C (A) N/A
  • Maximum Storage Temperature (°C) 175
  • Minimum Gate Resistance (Ohm) N/A
  • Minimum Gate Threshold Voltage (V) 1
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Tradename HEXFET®
  • Typical Diode Forward Voltage (V) N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 12@4.5V|11@10V
  • Typical Fall Time (ns) 48
  • Typical Forward Transconductance (S) 52(Min)
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 34@4.5V
  • Typical Gate Plateau Voltage (V) 2.6
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate Threshold Voltage (V) N/A
  • Typical Gate to Drain Charge (nC) 15
  • Typical Gate to Source Charge (nC) 10
  • Typical Input Capacitance @ Vds (pF) 3980@25V
  • Typical Output Capacitance (pF) 310
  • Typical Reverse Recovery Charge (nC) 42
  • Typical Reverse Recovery Time (ns) 34
  • Typical Reverse Transfer Capacitance @ Vds (pF) 130@25V
  • Typical Rise Time (ns) 110
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 33
  • Typical Turn-On Delay Time (ns) 24

Więcej informacji

Do pobrania Download
Main description Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK Tube