IRLR120NTRPBF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SKU
IRLR120NTRPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRLR120NTRPBF

Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 55
  • Inventory 9
  • PCNs 90
  • MaskPart IRLR120N%PBF
  • IntroductionDate Mar 04, 2004
  • EnablingEnergyEfficiency No
  • AliasParts SP001574026
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLR120NTRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material Si
  • Maximum Continuous Drain Current (A) 10
  • Maximum Drain Source Resistance (mOhm) 185@10V
  • Maximum Drain Source Voltage (V) 100
  • Maximum Gate Source Voltage (V) ±16
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 48000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 22
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 20(Max)@5V
  • Typical Input Capacitance @ Vds (pF) 440@25V
  • Typical Rise Time (ns) 35
  • Typical Turn-Off Delay Time (ns) 23
  • Typical Turn-On Delay Time (ns) 4

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Main description Trans MOSFET N-CH Si 100V 10A 3-Pin(2+Tab) DPAK T/R