IRLML6401TRPBF

Opis / IRLML6401TRPBF

Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R

Informacje podstawowe

Crosses 22
Inventory 1
PCNs 83
FoundINBOMs 1
MaskPart IRLML6401PBF%
IntroductionDate Nov 08, 2004
EnablingEnergyEfficiency No
AliasParts SP001577044
SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLML6401TRPBF

Category Power MOSFET
Channel Mode Enhancement
Channel Type P
Configuration Single
Material Si
Maximum Continuous Drain Current (A) 4.3
Maximum Continuous Drain Current @ Temperature (A) 3.4@Ta=70C
Maximum Drain Source Resistance (mOhm) 50@4.5V
Maximum Drain Source Resistance @ Vgs (mOhm) 50@4.5V|85@2.5V|125@1.8V
Maximum Drain Source Voltage (V) 12
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±8
Maximum Gate Threshold Voltage (V) 0.95
Maximum IDSS (uA) 1
Maximum Junction Ambient Thermal Resistance 100°C/W
Maximum Junction Case Thermal Resistance N/A
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 1300
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -55
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 1
Process Technology HEXFET
Typical Drain Source Resistance @ 125°C (mOhm) N/A
Typical Drain Source Resistance @ 25°C (mOhm) 75@2V|47@3V|39@4V|34.5@5V|33@6V|32@7V
Typical Fall Time (ns) 210
Typical Forward Transconductance (S) 8.6(Min)
Typical Gate Charge @ 10V (nC) N/A
Typical Gate Charge @ Vgs (nC) 10@5V
Typical Gate Resistance (Ohm) N/A
Typical Gate to Drain Charge (nC) 2.6
Typical Gate to Source Charge (nC) 1.4
Typical Input Capacitance @ Vds (pF) 830@10V
Typical Reverse Recovery Charge (nC) 8
Typical Rise Time (ns) 32
Typical Switch Charge (nC) N/A
Typical Turn-Off Delay Time (ns) 250
Typical Turn-On Delay Time (ns) 11

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Main description	Trans MOSFET P-CH Si 12V 4.3A 3-Pin SOT-23 T/R