IRLML5203TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SKU
IRLML5203TRPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRLML5203TRPBF

Trans MOSFET P-CH Si 30V 3A 3-Pin SOT-23 T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 106
  • Inventory 9
  • PCNs 77
  • FoundINBOMs 1
  • MaskPart IRLML5203%PBF
  • IntroductionDate Nov 08, 2004
  • EnablingEnergyEfficiency No
  • AliasParts SP001558846
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLML5203TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single
  • Material Si
  • Maximum Continuous Drain Current (A) 3
  • Maximum Continuous Drain Current @ Temperature (A) 2.4@Ta=70C
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A) N/A
  • Maximum Diode Forward Voltage (V) 1.2
  • Maximum Drain Source Resistance (mOhm) 98@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 98@10V|165@4.5V
  • Maximum Drain Source Voltage (V) 30
  • Maximum Gate Resistance (Ohm) N/A
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 2.5
  • Maximum IDSS (uA) 1
  • Maximum Junction Ambient Thermal Resistance 100°C/W
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 100
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Offset Voltage (mV) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Positive Gate Source Voltage (V) 20
  • Maximum Power Dissipation (mW) 1250
  • Maximum Power Dissipation on PCB @ TC=25°C (W) N/A
  • Maximum Pulsed Drain Current @ TC=25°C (A) 24
  • Maximum Storage Temperature (°C) 150
  • Minimum Gate Resistance (Ohm) N/A
  • Minimum Gate Threshold Voltage (V) 1
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -55 to 150
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Tradename HEXFET®
  • Typical Diode Forward Voltage (V) N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 103@6V|87.5@8V|80@10V|76@12V|72.514@14V
  • Typical Fall Time (ns) 52
  • Typical Forward Transconductance (S) 3.1(Min)
  • Typical Gate Charge @ 10V (nC) 9.5
  • Typical Gate Charge @ Vgs (nC) 9.5@10V
  • Typical Gate Plateau Voltage (V) 4
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate Threshold Voltage (V) N/A
  • Typical Gate to Drain Charge (nC) 1.6
  • Typical Gate to Source Charge (nC) 2.3
  • Typical Input Capacitance @ Vds (pF) 510@25V
  • Typical Output Capacitance (pF) 71
  • Typical Reverse Recovery Charge (nC) 12
  • Typical Reverse Recovery Time (ns) 17
  • Typical Reverse Transfer Capacitance @ Vds (pF) 43@25V
  • Typical Rise Time (ns) 18
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 88
  • Typical Turn-On Delay Time (ns) 12

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Main description Trans MOSFET P-CH Si 30V 3A 3-Pin SOT-23 T/R