IRFS3006-7PPbF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SKU
IRFS3006-7PPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRFS3006-7PPbF

Trans MOSFET N-CH Si 60V 293A 7-Pin(6+Tab) D2PAK Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 2
  • Inventory 5
  • PCNs 38
  • MaskPart IRFS30067PPbF%
  • IntroductionDate Oct 06, 2008
  • EnablingEnergyEfficiency No
  • AliasParts SP001567570
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFS3006-7PPbF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single Quint Source
  • Material Si
  • Maximum Continuous Drain Current (A) 293
  • Maximum Drain Source Resistance (mOhm) 2.1@10V
  • Maximum Drain Source Voltage (V) 60
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 375000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 69
  • Typical Gate Charge @ 10V (nC) 200
  • Typical Gate Charge @ Vgs (nC) 200@10V
  • Typical Input Capacitance @ Vds (pF) 8850@50V
  • Typical Rise Time (ns) 61
  • Typical Turn-Off Delay Time (ns) 118
  • Typical Turn-On Delay Time (ns) 14

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Main description Trans MOSFET N-CH Si 60V 293A 7-Pin(6+Tab) D2PAK Tube