IRFR5505TRPBF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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IRFR5505TRPBF_INFINEON_TECHNOLOGIES_AG
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Opis / IRFR5505TRPBF

Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 49
  • Inventory 10
  • PCNs 29
  • MaskPart IRFR5505%PBF
  • IntroductionDate Mar 04, 2004
  • EnablingEnergyEfficiency No
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFR5505TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 18
  • Maximum Continuous Drain Current @ Temperature (A) 11@Tc=100C
  • Maximum Drain Source Resistance (mOhm) 110@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 110@10V
  • Maximum Drain Source Voltage (V) 55
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 4
  • Maximum Junction Ambient Thermal Resistance 110°C/W
  • Maximum Junction Case Thermal Resistance 2.2°C/W
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 57000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) N/A
  • Typical Fall Time (ns) 16
  • Typical Forward Transconductance (S) 4.2(Min)
  • Typical Gate Charge @ 10V (nC) 32(Max)
  • Typical Gate Charge @ Vgs (nC) 32(Max)@10V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 15(Max)
  • Typical Gate to Source Charge (nC) 7.1(Max)
  • Typical Input Capacitance @ Vds (pF) 650@25V
  • Typical Output Capacitance (pF) 270
  • Typical Reverse Recovery Charge (nC) 110
  • Typical Rise Time (ns) 28
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 20
  • Typical Turn-On Delay Time (ns) 12

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Main description Trans MOSFET P-CH 55V 18A 3-Pin(2+Tab) DPAK T/R