IRFR014TRLPBF
ProducentVishayEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
- SKU
- IRFR014TRLPBF_VISHAY
- material
- N/A
0,00 zł
Opis / IRFR014TRLPBF
Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 77
- Inventory 1
- PCNs 44
- GIDEP-Alerts 3
- MaskPart IRFR014%PBF
- IntroductionDate Mar 27, 2007
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 7.7
- Maximum Continuous Drain Current @ Temperature (A) 4.9@Tc=100C
- Maximum Drain Source Resistance (mOhm) 200@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 200@10V
- Maximum Drain Source Voltage (V) 60
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 4
- Maximum IDSS (uA) 25
- Maximum Junction Ambient Thermal Resistance 110°C/W
- Maximum Junction Case Thermal Resistance 5°C/W
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology N/A
- Supplier Temperature Grade N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) N/A
- Typical Fall Time (ns) 19
- Typical Forward Transconductance (S) 2.4(Min)
- Typical Gate Charge @ 10V (nC) 11(Max)
- Typical Gate Charge @ Vgs (nC) 11(Max)@10V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 5.8(Max)
- Typical Gate to Source Charge (nC) 3.1(Max)
- Typical Input Capacitance @ Vds (pF) 300@25V
- Typical Output Capacitance (pF) 160
- Typical Reverse Recovery Charge (nC) 200
- Typical Rise Time (ns) 50
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 13
- Typical Turn-On Delay Time (ns) 10
Więcej informacji
| Do pobrania | Download |
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| Main description | Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK T/R |