IRFP2907PBF
ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
- SKU
- IRFP2907PBF_INFINEON_TECHNOLOGIES_AG
- material
- Si
0,00 zł
Opis / IRFP2907PBF
Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 18
- Inventory 8
- PCNs 62
- MaskPart IRFP2907PBF%
- IntroductionDate Feb 26, 2004
- EnablingEnergyEfficiency No
- AliasParts SP001571058
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFP2907PBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material Si
- Maximum Continuous Drain Current (A) 209
- Maximum Drain Source Resistance (mOhm) 4.5@10V
- Maximum Drain Source Voltage (V) 75
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 470000
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 130
- Typical Gate Charge @ 10V (nC) 410
- Typical Gate Charge @ Vgs (nC) 410@10V
- Typical Input Capacitance @ Vds (pF) 13000@25V
- Typical Rise Time (ns) 190
- Typical Turn-Off Delay Time (ns) 130
- Typical Turn-On Delay Time (ns) 23
Więcej informacji
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH Si 75V 209A 3-Pin(3+Tab) TO-247AC Tube |