IRFL9110TRPBF

ProducentVishayEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SKU
IRFL9110TRPBF_VISHAY
material
N/A
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Opis / IRFL9110TRPBF

Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R

Informacje podstawowe

  • ProducentVishay
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 22
  • Inventory 7
  • PCNs 38
  • GIDEP-Alerts 3
  • MaskPart IRFL9110%PBF
  • IntroductionDate Mar 27, 2007

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single Dual Drain
  • Material N/A
  • Maximum Continuous Drain Current (A) 1.1
  • Maximum Drain Source Resistance (mOhm) 1200@10V
  • Maximum Drain Source Voltage (V) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2000
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology N/A
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 17
  • Typical Gate Charge @ 10V (nC) 8.7(Max)
  • Typical Gate Charge @ Vgs (nC) 8.7(Max)@10V
  • Typical Input Capacitance @ Vds (pF) 200@25V
  • Typical Rise Time (ns) 27
  • Typical Turn-Off Delay Time (ns) 15
  • Typical Turn-On Delay Time (ns) 10

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Main description Trans MOSFET P-CH 100V 1.1A 4-Pin(3+Tab) SOT-223 T/R