IRFL024ZPBF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SKU
IRFL024ZPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRFL024ZPBF

Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 10
  • Inventory 9*
  • PCNs 28
  • MaskPart IRFL024Z%PBF
  • IntroductionDate May 25, 2004
  • EnablingEnergyEfficiency No
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFL024ZPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single Dual Drain
  • Material Si
  • Maximum Continuous Drain Current (A) 5.1
  • Maximum Continuous Drain Current @ Temperature (A) 4.1@Ta=70C
  • Maximum Drain Source Resistance (mOhm) 57.5@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 57.5@10V
  • Maximum Drain Source Voltage (V) 55
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 4
  • Maximum Junction Ambient Thermal Resistance 120°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2800
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 46.2@10V
  • Typical Fall Time (ns) 23
  • Typical Forward Transconductance (S) 6.2(Min)
  • Typical Gate Charge @ 10V (nC) 9.1
  • Typical Gate Charge @ Vgs (nC) 9.1@10V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 3.9
  • Typical Gate to Source Charge (nC) 1.9
  • Typical Input Capacitance @ Vds (pF) 340@25V
  • Typical Output Capacitance (pF) 210
  • Typical Reverse Recovery Charge (nC) 9.8
  • Typical Rise Time (ns) 21
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 30
  • Typical Turn-On Delay Time (ns) 7.8

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Main description Trans MOSFET N-CH Si 55V 5.1A 4-Pin(3+Tab) SOT-223 Tube