IRFF9230-JQR-B

ProducentTT ElectronicsEURoHSUnknown (2002/95/EC)Automotive No.
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IRFF9230-JQR-B_TT_ELECTRONICS
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Opis / IRFF9230-JQR-B

Trans MOSFET P-CH 200V 4A 3-Pin TO-39

Informacje podstawowe

  • ProducentTT Electronics
  • EURoHSUnknown (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • PCNs 15
  • MaskPart IRFF9230JQRB%
  • IntroductionDate Oct 11, 2002

Parametry

  • Category Power MOSFET
  • Channel Mode N/A
  • Channel Type P
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 4
  • Maximum Drain Source Resistance (mOhm) 800
  • Maximum Drain Source Voltage (V) 200
  • Maximum Gate Source Leakage Current (nA) N/A
  • Maximum Gate Source Voltage (V) N/A
  • Maximum Gate Threshold Voltage (V) N/A
  • Maximum IDSS (uA) N/A
  • Maximum Operating Temperature (°C) N/A
  • Maximum Power Dissipation (mW) 25000
  • Maximum Storage Temperature (°C) N/A
  • Minimum Operating Temperature (°C) N/A
  • Minimum Storage Temperature (°C) N/A
  • Number of Elements per Chip 1
  • Process Technology N/A
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 80(Max)
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 34.8(Max)
  • Typical Input Capacitance @ Vds (pF) 700
  • Typical Rise Time (ns) 100(Max)
  • Typical Turn-Off Delay Time (ns) 100(Max)
  • Typical Turn-On Delay Time (ns) 50(Max)

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Main description Trans MOSFET P-CH 200V 4A 3-Pin TO-39