IRF9Z34NSTRRPBF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SKU
IRF9Z34NSTRRPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRF9Z34NSTRRPBF

Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 15
  • Inventory 3
  • PCNs 46
  • MaskPart IRF9Z34NS%PBF
  • IntroductionDate Aug 25, 1997
  • EnablingEnergyEfficiency No
  • AliasParts SP001551716
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF9Z34NSTRRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single
  • Material Si
  • Maximum Continuous Drain Current (A) 19
  • Maximum Continuous Drain Current @ Temperature (A) 14@Tc=100C
  • Maximum Drain Source Resistance (mOhm) 100@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 100@10V
  • Maximum Drain Source Voltage (V) 55
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 4
  • Maximum Junction Ambient Thermal Resistance 40°C/W
  • Maximum Junction Case Thermal Resistance 2.2°C/W
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 3800
  • Maximum Storage Temperature (°C) 175
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) N/A
  • Typical Fall Time (ns) 41
  • Typical Forward Transconductance (S) 4.2(Min)
  • Typical Gate Charge @ 10V (nC) 35(Max)
  • Typical Gate Charge @ Vgs (nC) 35(Max)@10V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 16(Max)
  • Typical Gate to Source Charge (nC) 7.9(Max)
  • Typical Input Capacitance @ Vds (pF) 620@25V
  • Typical Output Capacitance (pF) 280
  • Typical Reverse Recovery Charge (nC) 110
  • Typical Rise Time (ns) 55
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 30
  • Typical Turn-On Delay Time (ns) 13

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Main description Trans MOSFET P-CH Si 55V 19A 3-Pin(2+Tab) D2PAK T/R