IRF9910TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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IRF9910TRPBF_INFINEON_TECHNOLOGIES_AG
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Opis / IRF9910TRPBF

Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 13
  • Inventory 5
  • PCNs 68
  • MaskPart IRF9910%PBF
  • IntroductionDate Apr 28, 2004
  • EnablingEnergyEfficiency No
  • AliasParts SP001575370
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF9910TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Dual Dual Drain
  • Material N/A
  • Maximum Continuous Drain Current (A) 10@Q 1|12@Q 2
  • Maximum Continuous Drain Current @ Temperature (A) 8.3@Ta=70C@Q 1|9.9@Ta=70C@Q 2
  • Maximum Drain Source Resistance (mOhm) 13.4@10V@Q 1|9.3@10V@Q 2
  • Maximum Drain Source Resistance @ Vgs (mOhm) 13.4@10V|18.3@4.5V@Q 1|9.3@10V|11.3@4.5V@Q 2
  • Maximum Drain Source Voltage (V) 20
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 2.55
  • Maximum Junction Ambient Thermal Resistance 62.5°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 2
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) 23.5@4V|18.5@5V|16.5@6V|16@7V|15.2@8V|15@9V|14.99@10V@Q 1|14@4V|12@5V|11.5@6V|11@7V|10.5@8V|10.25@9V|10.1@10V@Q 2
  • Typical Drain Source Resistance @ 25°C (mOhm) 10.7@10V|14.6@4.5V@Q 1|7.4@10V|9.1@4.5V@Q 2
  • Typical Fall Time (ns) 4.5@Q 1|7.5@Q 2
  • Typical Forward Transconductance (S) 19(Min)@Q 1|27(Min)@Q 2
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 7.4@4.5V@Q 1|15@4.5V@Q 2
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 2.5@Q 1|5.4@Q 2
  • Typical Gate to Source Charge (nC) 2.6@Q 1|4.3@Q 2
  • Typical Input Capacitance @ Vds (pF) 900@10V@Q 1|1860@10V@Q 2
  • Typical Output Capacitance (pF) 290@Q 1|600@Q 2
  • Typical Reverse Recovery Charge (nC) 3.1@Q 1|4.9@Q 2
  • Typical Rise Time (ns) 10@Q 1|14@Q 2
  • Typical Switch Charge (nC) 3.4@Q 1|6.8@Q 2
  • Typical Turn-Off Delay Time (ns) 9.2@Q 1|15@Q 2
  • Typical Turn-On Delay Time (ns) 6.3@Q 1|8.3@Q 2

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Main description Trans MOSFET N-CH 20V 10A/12A 8-Pin SOIC T/R