IRF9530NSPbF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SKU
IRF9530NSPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRF9530NSPbF

Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 28
  • Inventory 3
  • PCNs 70
  • MaskPart IRF9530NS%PBF
  • IntroductionDate Apr 26, 2005
  • EnablingEnergyEfficiency No
  • AliasParts SP001555856
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF9530NSPbF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single
  • Material Si
  • Maximum Continuous Drain Current (A) 14
  • Maximum Drain Source Resistance (mOhm) 200@10V
  • Maximum Drain Source Voltage (V) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 3800
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Typical Fall Time (ns) 46
  • Typical Gate Charge @ 10V (nC) 58(Max)
  • Typical Gate Charge @ Vgs (nC) 58(Max)@10V
  • Typical Input Capacitance @ Vds (pF) 760@25V
  • Typical Rise Time (ns) 58
  • Typical Turn-Off Delay Time (ns) 45
  • Typical Turn-On Delay Time (ns) 15

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Main description Trans MOSFET P-CH Si 100V 14A 3-Pin(2+Tab) D2PAK Tube