IRF7907PbF-1

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU)Automotive No.
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IRF7907PBF-1_INFINEON_TECHNOLOGIES_AG
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Opis / IRF7907PbF-1

Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 44
  • PCNs 12
  • MaskPart IRF7907PbF1%
  • IntroductionDate Nov 22, 2013
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7907PbF-1

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Dual Dual Drain
  • Material N/A
  • Maximum Continuous Drain Current (A) 9.1@Q 1|11@Q 2
  • Maximum Drain Source Resistance (mOhm) 16.4@10V@Q 1|11.8@10V@Q 2
  • Maximum Drain Source Voltage (V) 30
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 2.35
  • Maximum IDSS (uA) 1
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2000
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 2
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 3.4@Q 1|5.3@Q 2
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 6.7@4.5V@Q 1|14@4.5V@Q 2
  • Typical Input Capacitance @ Vds (pF) 850@15V@Q 1|1790@15V@Q 2
  • Typical Rise Time (ns) 9.3@Q 1|14@Q 2
  • Typical Turn-Off Delay Time (ns) 8@Q 1|13@Q 2
  • Typical Turn-On Delay Time (ns) 6@Q 1|8@Q 2

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Main description Trans MOSFET N-CH 30V 9.1A/11A 8-Pin SOIC T/R