IRF7842TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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IRF7842TRPBF_INFINEON_TECHNOLOGIES_AG
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Opis / IRF7842TRPBF

Trans MOSFET N-CH 40V 18A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 16
  • Inventory 6
  • PCNs 85
  • MaskPart IRF7842%PBF
  • IntroductionDate Apr 26, 2004
  • EnablingEnergyEfficiency No
  • AliasParts SP001577684
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7842TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single Quad Drain Triple Source
  • Material N/A
  • Maximum Continuous Drain Current (A) 18
  • Maximum Continuous Drain Current @ Temperature (A) 14@Ta=70C
  • Maximum Drain Source Resistance (mOhm) 5@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 5@10V|5.9@4.5V
  • Maximum Drain Source Voltage (V) 40
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 2.25
  • Maximum IDSS (uA) 1
  • Maximum Junction Ambient Thermal Resistance 50°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2500
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Tradename HEXFET®
  • Typical Drain Source Resistance @ 125°C (mOhm) 7@4V|6.2@6V|6@8V|5.8@10V
  • Typical Drain Source Resistance @ 25°C (mOhm) 4@10V|4.7@4.5V
  • Typical Fall Time (ns) 5
  • Typical Forward Transconductance (S) 81(Min)
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 33@4.5V
  • Typical Gate Resistance (Ohm) 1.3
  • Typical Gate to Drain Charge (nC) 10
  • Typical Gate to Source Charge (nC) 9.6
  • Typical Input Capacitance @ Vds (pF) 4500@20V
  • Typical Output Capacitance (pF) 680
  • Typical Reverse Recovery Charge (nC) 11
  • Typical Rise Time (ns) 12
  • Typical Switch Charge (nC) 12.8
  • Typical Turn-Off Delay Time (ns) 21
  • Typical Turn-On Delay Time (ns) 14

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Main description Trans MOSFET N-CH 40V 18A 8-Pin SOIC T/R