IRF7580MTRPbF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SKU
IRF7580MTRPBF_INFINEON_TECHNOLOGIES_AG
material
N/A
0,00 zł

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Opis / IRF7580MTRPbF

Trans MOSFET N-CH 60V 114A 10-Pin Direct-FET ME T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Inventory 6
  • PCNs 26
  • MaskPart IRF7580M%PbF
  • IntroductionDate Feb 13, 2014
  • AliasParts SP001551448
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7580MTRPbF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single Quad Drain Quint Source
  • Material N/A
  • Maximum Continuous Drain Current (A) 114
  • Maximum Drain Source Resistance (mOhm) 3.6@10V
  • Maximum Drain Source Voltage (V) 60
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 3.7
  • Maximum IDSS (uA) 1
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 96000
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology DirectFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 21
  • Typical Gate Charge @ 10V (nC) 120
  • Typical Gate Charge @ Vgs (nC) 120@10V
  • Typical Input Capacitance @ Vds (pF) 6510@25V
  • Typical Rise Time (ns) 38
  • Typical Turn-Off Delay Time (ns) 53
  • Typical Turn-On Delay Time (ns) 20

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Main description Trans MOSFET N-CH 60V 114A 10-Pin Direct-FET ME T/R