IRF7470TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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IRF7470TRPBF_INFINEON_TECHNOLOGIES_AG
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Opis / IRF7470TRPBF

Trans MOSFET N-CH 40V 10A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 52
  • Inventory 8
  • PCNs 74
  • MaskPart IRF7470%PBF
  • IntroductionDate Nov 06, 2000
  • EnablingEnergyEfficiency No
  • AliasParts SP001570336
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7470TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single Quad Drain Triple Source
  • Material N/A
  • Maximum Continuous Drain Current (A) 10
  • Maximum Continuous Drain Current @ Temperature (A) 8.5@Ta=70C
  • Maximum Drain Source Resistance (mOhm) 13@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 13@10V|15@4.5V|30@2.8V
  • Maximum Drain Source Voltage (V) 40
  • Maximum Gate Source Voltage (V) ±12
  • Maximum Gate Threshold Voltage (V) 2
  • Maximum Junction Ambient Thermal Resistance 50°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2500
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 9@10V|10@4.5V|14.5@2.8V
  • Typical Fall Time (ns) 3.2
  • Typical Forward Transconductance (S) 27(Min)
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 29@4.5V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 8
  • Typical Gate to Source Charge (nC) 7.9
  • Typical Input Capacitance @ Vds (pF) 3430@20V
  • Typical Output Capacitance (pF) 690
  • Typical Reverse Recovery Charge (nC) 130
  • Typical Rise Time (ns) 1.9
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 21
  • Typical Turn-On Delay Time (ns) 10

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Main description Trans MOSFET N-CH 40V 10A 8-Pin SOIC T/R