IRF7455TRPbF-1

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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IRF7455TRPBF-1_INFINEON_TECHNOLOGIES_AG
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Opis / IRF7455TRPbF-1

Trans MOSFET N-CH 30V 15A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 617
  • PCNs 12
  • MaskPart IRF7455%PbF1
  • IntroductionDate Nov 20, 2013
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7455TRPbF-1

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single Quad Drain Triple Source
  • Material N/A
  • Maximum Continuous Drain Current (A) 15
  • Maximum Drain Source Resistance (mOhm) 7.5@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 7.5@10V|9@4.5V|20@2.8V
  • Maximum Drain Source Voltage (V) 30
  • Maximum Gate Source Leakage Current (nA) 200
  • Maximum Gate Source Voltage (V) ±12
  • Maximum Gate Threshold Voltage (V) 2
  • Maximum IDSS (uA) 20
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2500
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 6@10V|6.9@4.5V|10@2.8V
  • Typical Fall Time (ns) 44
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 37@5V
  • Typical Input Capacitance @ Vds (pF) 3480@25V
  • Typical Rise Time (ns) 18
  • Typical Turn-Off Delay Time (ns) 51
  • Typical Turn-On Delay Time (ns) 17

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Main description Trans MOSFET N-CH 30V 15A 8-Pin SOIC T/R