IRF7410PBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU)Automotive No.
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SKU
IRF7410PBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRF7410PBF

Trans MOSFET P-CH Si 20V 16A 8-Pin SOIC Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 10
  • Inventory 8
  • PCNs 26
  • MaskPart IRF7410%PBF
  • IntroductionDate Aug 25, 2006
  • EnablingEnergyEfficiency No
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7410PBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single Quad Drain Triple Source
  • Material Si
  • Maximum Continuous Drain Current (A) 16
  • Maximum Continuous Drain Current @ Temperature (A) 13@Ta=70C
  • Maximum Drain Source Resistance (mOhm) 7@4.5V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 7@4.5V|9@2.5V|13@1.8V
  • Maximum Drain Source Voltage (V) 20
  • Maximum Gate Source Voltage (V) ±8
  • Maximum Gate Threshold Voltage (V) 0.9
  • Maximum Junction Ambient Thermal Resistance 50°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2500
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 6.9@2V|4.8@4V|4.1@6V
  • Typical Fall Time (ns) 200
  • Typical Forward Transconductance (S) 55(Min)
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 91@4.5V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 25
  • Typical Gate to Source Charge (nC) 18
  • Typical Input Capacitance @ Vds (pF) 8676@10V
  • Typical Reverse Recovery Charge (nC) 134000
  • Typical Rise Time (ns) 12
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 271
  • Typical Turn-On Delay Time (ns) 13

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Main description Trans MOSFET P-CH Si 20V 16A 8-Pin SOIC Tube