IRF7401TRPbF-1

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU)Automotive No.
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IRF7401TRPBF-1_INFINEON_TECHNOLOGIES_AG
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N/A
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Opis / IRF7401TRPbF-1

Trans MOSFET N-CH 20V 8.7A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 24
  • PCNs 12
  • MaskPart IRF7401%PbF1
  • IntroductionDate Nov 18, 2013
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7401TRPbF-1

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single Quad Drain Triple Source
  • Material N/A
  • Maximum Continuous Drain Current (A) 8.7
  • Maximum Drain Source Resistance (mOhm) 22@4.5V
  • Maximum Drain Source Voltage (V) 20
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±12
  • Maximum Gate Threshold Voltage (V) 0.7(Min)
  • Maximum IDSS (uA) 1
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2500
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 92
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 48(Max)@4.5V
  • Typical Input Capacitance @ Vds (pF) 1600@15V
  • Typical Rise Time (ns) 72
  • Typical Turn-Off Delay Time (ns) 65
  • Typical Turn-On Delay Time (ns) 13

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Main description Trans MOSFET N-CH 20V 8.7A 8-Pin SOIC T/R