IRF7343TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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IRF7343TRPBF_INFINEON_TECHNOLOGIES_AG
material
N/A
0,00 zł

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Opis / IRF7343TRPBF

Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 4
  • Inventory 7
  • PCNs 79
  • MaskPart IRF7343%PBF
  • IntroductionDate Feb 24, 1999
  • EnablingEnergyEfficiency No
  • AliasParts SP001565516
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7343TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N|P
  • Configuration Dual Dual Drain
  • Material N/A
  • Maximum Continuous Drain Current (A) 4.7@N Channel|3.4@P Channel
  • Maximum Drain Source Resistance (mOhm) 50@10V@N Channel|105@10V@P Channel
  • Maximum Drain Source Voltage (V) 55
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 2
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 13@N Channel|22@P Channel
  • Typical Gate Charge @ 10V (nC) 24@N Channel|26@P Channel
  • Typical Gate Charge @ Vgs (nC) 24@10V@N Channel|26@10V@P Channel
  • Typical Input Capacitance @ Vds (pF) 740@25V@N Channel|690@25V@P Channel
  • Typical Rise Time (ns) 3.2@N Channel|10@P Channel
  • Typical Turn-Off Delay Time (ns) 32@N Channel|43@P Channel
  • Typical Turn-On Delay Time (ns) 8.3@N Channel|14@P Channel

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Main description Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC T/R