IRF7341TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SKU
IRF7341TRPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRF7341TRPBF

Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 22
  • Inventory 8
  • PCNs 83
  • MaskPart IRF7341%PBF
  • IntroductionDate Feb 24, 1999
  • EnablingEnergyEfficiency No
  • AliasParts SP001554204
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7341TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Dual Dual Drain
  • Material Si
  • Maximum Continuous Drain Current (A) 4.7
  • Maximum Continuous Drain Current @ Temperature (A) 3.8@Tc=70C
  • Maximum Drain Source Resistance (mOhm) 50@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 50@10V|65@4.5V
  • Maximum Drain Source Voltage (V) 55
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 1(Min)
  • Maximum Junction Ambient Thermal Resistance 62.5°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 2
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 43@10V|56@4.5V
  • Typical Fall Time (ns) 13
  • Typical Forward Transconductance (S) 7.9(Min)
  • Typical Gate Charge @ 10V (nC) 24
  • Typical Gate Charge @ Vgs (nC) 24@10V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 7
  • Typical Gate to Source Charge (nC) 2.3
  • Typical Input Capacitance @ Vds (pF) 740@25V
  • Typical Output Capacitance (pF) 190
  • Typical Reverse Recovery Charge (nC) 120
  • Typical Rise Time (ns) 3.2
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 32
  • Typical Turn-On Delay Time (ns) 8.3

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Main description Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R