IRF7328TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU)Automotive No.
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SKU
IRF7328TRPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRF7328TRPBF

Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU)
  • Automotive No

Informacje dodatkowe

  • Crosses 31
  • Inventory 9
  • PCNs 69
  • FoundINBOMs 2
  • MaskPart IRF7328%PBF
  • IntroductionDate Oct 04, 2000
  • EnablingEnergyEfficiency No
  • AliasParts SP001565270
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7328TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Dual Dual Drain
  • Material Si
  • Maximum Continuous Drain Current (A) 8
  • Maximum Continuous Drain Current @ Temperature (A) 6.4@Ta=70C
  • Maximum Drain Source Resistance (mOhm) 21@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 21@10V|32@4.5V
  • Maximum Drain Source Voltage (V) 30
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 2.5
  • Maximum Junction Ambient Thermal Resistance 62.5°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 2
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 17@10V|26.8@4.5V
  • Typical Fall Time (ns) 98
  • Typical Forward Transconductance (S) 12(Min)
  • Typical Gate Charge @ 10V (nC) 52
  • Typical Gate Charge @ Vgs (nC) 52@10V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 8.3
  • Typical Gate to Source Charge (nC) 9.8
  • Typical Input Capacitance @ Vds (pF) 2675@25V
  • Typical Output Capacitance (pF) 409
  • Typical Reverse Recovery Charge (nC) 36
  • Typical Rise Time (ns) 15
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 198
  • Typical Turn-On Delay Time (ns) 13

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Main description Trans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R