IRF7316PbF
ProducentInfineon Technologies AGEURoHSYes (2011/65/EU)Automotive No.
- SKU
- IRF7316PBF_INFINEON_TECHNOLOGIES_AG
- material
- N/A
0,00 zł
Opis / IRF7316PbF
Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC Tube
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 60
- Inventory 10
- PCNs 28
- MaskPart IRF7316%PBF
- IntroductionDate Oct 07, 2004
- EnablingEnergyEfficiency No
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7316PbF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Dual Dual Drain
- Material N/A
- Maximum Continuous Drain Current (A) 4.9
- Maximum Continuous Drain Current @ Temperature (A) 3.9@Ta=70C
- Maximum Drain Source Resistance (mOhm) 58@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 58@10V|98@4.5V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 1(Min)
- Maximum Junction Ambient Thermal Resistance 62.5°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Power Dissipation (mW) 2000
- Number of Elements per Chip 2
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) 42@10V|76@4.5V
- Typical Fall Time (ns) 32
- Typical Forward Transconductance (S) 7.7
- Typical Gate Charge @ 10V (nC) 23
- Typical Gate Charge @ Vgs (nC) 23@10V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 5.9
- Typical Gate to Source Charge (nC) 3.8
- Typical Input Capacitance @ Vds (pF) 710@25V
- Typical Reverse Recovery Charge (nC) 42
- Typical Rise Time (ns) 13
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 34
- Typical Turn-On Delay Time (ns) 13
Więcej informacji
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 30V 4.9A 8-Pin SOIC Tube |