IRF7314TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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SKU
IRF7314TRPBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

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Opis / IRF7314TRPBF

Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 54
  • Inventory 7
  • PCNs 69
  • MaskPart IRF7314%PBF
  • IntroductionDate Nov 18, 1997
  • EnablingEnergyEfficiency No
  • AliasParts SP001570224
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7314TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Dual Dual Drain
  • Material Si
  • Maximum Continuous Drain Current (A) 5.3
  • Maximum Continuous Drain Current @ Temperature (A) 4.3@Ta=70C
  • Maximum Drain Source Resistance (mOhm) 58@4.5V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 58@4.5V|98@2.7V
  • Maximum Drain Source Voltage (V) 20
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±12
  • Maximum Gate Threshold Voltage (V) 0.7(Min)
  • Maximum IDSS (uA) 1
  • Maximum Junction Ambient Thermal Resistance 62.5°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 2000
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 2
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Tradename HEXFET®
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 49@4.5V|82@2.7V
  • Typical Fall Time (ns) 49
  • Typical Forward Transconductance (S) 5.9
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 19@4.5V
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate to Drain Charge (nC) 7.7
  • Typical Gate to Source Charge (nC) 4
  • Typical Input Capacitance @ Vds (pF) 780@15V
  • Typical Output Capacitance (pF) 470
  • Typical Reverse Recovery Charge (nC) 49
  • Typical Rise Time (ns) 40
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 42
  • Typical Turn-On Delay Time (ns) 15

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Main description Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC T/R