IRF7313TRPBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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IRF7313TRPBF_INFINEON_TECHNOLOGIES_AG
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Opis / IRF7313TRPBF

Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 317
  • Inventory 7
  • PCNs 84
  • MaskPart IRF7313%PBF
  • IntroductionDate Aug 25, 1997
  • EnablingEnergyEfficiency No
  • AliasParts SP001562160
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7313TRPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Dual Dual Drain
  • Material N/A
  • Maximum Continuous Drain Current (A) 6.5
  • Maximum Continuous Drain Current @ Temperature (A) 5.2@Ta=70C
  • Maximum Continuous Drain Current on PCB @ TC=25°C (A) 6.5
  • Maximum Diode Forward Voltage (V) 1
  • Maximum Drain Source Resistance (mOhm) 29@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 29@10V|46@4.5V
  • Maximum Drain Source Voltage (V) 30
  • Maximum Gate Resistance (Ohm) N/A
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Gate Threshold Voltage (V) 1(Min)
  • Maximum IDSS (uA) 1
  • Maximum Junction Ambient Thermal Resistance 62.5°C/W
  • Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 62.5
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Offset Voltage (mV) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Positive Gate Source Voltage (V) 20
  • Maximum Power Dissipation (mW) 2000
  • Maximum Power Dissipation on PCB @ TC=25°C (W) 2
  • Maximum Pulsed Drain Current @ TC=25°C (A) 30
  • Maximum Storage Temperature (°C) 150
  • Minimum Gate Resistance (Ohm) N/A
  • Minimum Gate Threshold Voltage (V) 1
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 2
  • Operating Junction Temperature (°C) -55 to 150
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Tradename HEXFET®
  • Typical Diode Forward Voltage (V) 0.78
  • Typical Drain Source Resistance @ 125°C (mOhm) N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 23@10V|32@4.5V
  • Typical Fall Time (ns) 17
  • Typical Forward Transconductance (S) 14
  • Typical Gate Charge @ 10V (nC) 22
  • Typical Gate Charge @ Vgs (nC) 22@10V
  • Typical Gate Plateau Voltage (V) 3.2
  • Typical Gate Resistance (Ohm) N/A
  • Typical Gate Threshold Voltage (V) N/A
  • Typical Gate to Drain Charge (nC) 6.4
  • Typical Gate to Source Charge (nC) 2.6
  • Typical Input Capacitance @ Vds (pF) 650@25V
  • Typical Output Capacitance (pF) 320
  • Typical Reverse Recovery Charge (nC) 58
  • Typical Reverse Recovery Time (ns) 45
  • Typical Reverse Transfer Capacitance @ Vds (pF) 130@25V
  • Typical Rise Time (ns) 8.9
  • Typical Switch Charge (nC) N/A
  • Typical Turn-Off Delay Time (ns) 26
  • Typical Turn-On Delay Time (ns) 8.1

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Main description Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R