IRF3710PBF

ProducentInfineon Technologies AGEURoHSYes (2011/65/EU, 2015/863)Automotive No.
Powiadom mnie gdy produkt będzie dostępny
SKU
IRF3710PBF_INFINEON_TECHNOLOGIES_AG
material
Si
0,00 zł

Zapytaj o ten produkt

Opis / IRF3710PBF

Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 48
  • Inventory 8
  • PCNs 105
  • FoundINBOMs 1
  • MaskPart IRF3710PBF%
  • IntroductionDate Jan 29, 2004
  • EnablingEnergyEfficiency No
  • AliasParts SP001551058
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF3710PBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material Si
  • Maximum Continuous Drain Current (A) 57
  • Maximum Drain Source Resistance (mOhm) 23@10V
  • Maximum Drain Source Voltage (V) 100
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 200000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 47
  • Typical Gate Charge @ 10V (nC) 130(Max)
  • Typical Gate Charge @ Vgs (nC) 130(Max)@10V
  • Typical Input Capacitance @ Vds (pF) 3130@25V
  • Typical Rise Time (ns) 58
  • Typical Turn-Off Delay Time (ns) 45
  • Typical Turn-On Delay Time (ns) 12

Więcej informacji

Do pobrania Download
Main description Trans MOSFET N-CH Si 100V 57A 3-Pin(3+Tab) TO-220AB Tube