IRF1018ESPBF

ProducentInfineon Technologies AGEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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IRF1018ESPBF_INFINEON_TECHNOLOGIES_AG
material
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0,00 zł

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Opis / IRF1018ESPBF

Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK Tube

Informacje podstawowe

  • ProducentInfineon Technologies AG
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 178
  • Inventory 1
  • PCNs 67
  • MaskPart IRF1018ESPBF%
  • IntroductionDate Feb 28, 2008
  • EnablingEnergyEfficiency No
  • AliasParts SP001561450
  • SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF1018ESPBF

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 79
  • Maximum Drain Source Resistance (mOhm) 8.4@10V
  • Maximum Drain Source Resistance @ Vgs (mOhm) 8.4@10V
  • Maximum Drain Source Voltage (V) 60
  • Maximum Gate Source Voltage (V) ±20
  • Maximum Operating Temperature (°C) 175
  • Maximum Power Dissipation (mW) 110000
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology HEXFET
  • Supplier Temperature Grade N/A
  • Typical Drain Source Resistance @ 25°C (mOhm) 7.1@10V
  • Typical Fall Time (ns) 46
  • Typical Gate Charge @ 10V (nC) 46
  • Typical Gate Charge @ Vgs (nC) 46@10V
  • Typical Input Capacitance @ Vds (pF) 2290@50V
  • Typical Rise Time (ns) 35
  • Typical Turn-Off Delay Time (ns) 55
  • Typical Turn-On Delay Time (ns) 13

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Main description Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) D2PAK Tube