FDN304PZ

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Main description Trans MOSFET P-CH 20V 2.4A 3-Pin SuperSOT T/R
Trans MOSFET P-CH 20V 2.4A 3-Pin SuperSOT T/R

Informacje podstawowe

  • ProducentON Semiconductor
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 98
  • Inventory 8
  • PCNs 35
  • GIDEP-Alerts 2
  • MaskPart FDN304PZ%
  • IntroductionDate Mar 21, 2003
  • SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=FDN304PZ&tabbed=Y&clearFilters=Y&searchType=others

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type P
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 2.4
  • Maximum Drain Source Resistance (mOhm) 52@4.5V
  • Maximum Drain Source Voltage (V) 20
  • Maximum Gate Source Voltage (V) ±8
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 500
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology TMOS
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 25
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 12@4.5V
  • Typical Input Capacitance @ Vds (pF) 1310@10V
  • Typical Rise Time (ns) 15
  • Typical Turn-Off Delay Time (ns) 40
  • Typical Turn-On Delay Time (ns) 15
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