BZW50-68

ProducentNew Jersey Semi-ConductorAutomotive No.
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BZW50-68_NEW_JERSEY_SEMI-CONDUCTOR
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Opis / BZW50-68

Diode TVS Single Uni-Dir 68V 5KW 2-Pin Case D-6

Informacje podstawowe

  • ProducentNew Jersey Semi-Conductor
  • Automotive No

Informacje dodatkowe

  • Crosses 325
  • MaskPart BZW5068%
  • IntroductionDate Feb 22, 2016

Parametry

  • Capacitance Value (pF) 3000(Typ)
  • Configuration Single
  • Direction Type Uni-Directional
  • Maximum Breakdown Voltage (V) 924
  • Maximum Clamping Voltage (V) 121
  • Maximum Forward Voltage (V) N/A
  • Maximum Operating Temperature (°C) 175
  • Maximum Peak Pulse Current (A) 41
  • Maximum Reverse Leakage Current (uA) 5
  • Maximum Reverse Stand-Off Voltage (V) 68
  • Maximum Storage Temperature (°C) 175
  • Minimum Breakdown Voltage (V) 75.6
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -65 to 175
  • Peak Forward Surge Current (A) 500
  • Peak Pulse Power Dissipation (W) 5000
  • Supplier Temperature Grade N/A
  • Test Current (mA) 1
  • Tradename N/A

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Main description Diode TVS Single Uni-Dir 68V 5KW 2-Pin Case D-6