BZW50-33BRL

ProducentSTMicroelectronicsEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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BZW50-33BRL_STMICROELECTRONICS
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Opis / BZW50-33BRL

Diode TVS Single Bi-Dir 33V 5KW 2-Pin Case R-6 T/R

Informacje podstawowe

  • ProducentSTMicroelectronics
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 1157
  • Inventory 2
  • PCNs 19
  • MaskPart BZW5033B%
  • IntroductionDate Jan 27, 1998

Parametry

  • Configuration Single
  • Direction Type Bi-Directional
  • Maximum Clamping Voltage (V) 76
  • Maximum Operating Temperature (°C) 175
  • Maximum Peak Pulse Current (A) 789
  • Maximum Reverse Leakage Current (uA) 5
  • Maximum Reverse Stand-Off Voltage (V) 33
  • Maximum Storage Temperature (°C) 175
  • Minimum Breakdown Voltage (V) 36.6
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) 175
  • Peak Pulse Power Dissipation (W) 5000
  • Supplier Temperature Grade N/A
  • Test Current (mA) 1

Więcej informacji

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Main description Diode TVS Single Bi-Dir 33V 5KW 2-Pin Case R-6 T/R