BZW50-150B

ProducentNew Jersey Semi-ConductorAutomotive No.
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SKU
BZW50-150B_NEW_JERSEY_SEMI-CONDUCTOR
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Opis / BZW50-150B

Diode TVS Single Bi-Dir 150V 5KW 2-Pin Case D-6

Informacje podstawowe

  • ProducentNew Jersey Semi-Conductor
  • Automotive No

Informacje dodatkowe

  • Crosses 1059
  • MaskPart BZW50150B%
  • IntroductionDate Feb 22, 2016

Parametry

  • Capacitance Value (pF) 1700(Typ)
  • Configuration Single
  • Direction Type Bi-Directional
  • Maximum Breakdown Voltage (V) 204
  • Maximum Clamping Voltage (V) 269
  • Maximum Forward Voltage (V) N/A
  • Maximum Operating Temperature (°C) 175
  • Maximum Peak Pulse Current (A) 19
  • Maximum Reverse Leakage Current (uA) 5
  • Maximum Reverse Stand-Off Voltage (V) 150
  • Maximum Storage Temperature (°C) 175
  • Minimum Breakdown Voltage (V) 166
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -65 to 175
  • Peak Forward Surge Current (A) 500
  • Peak Pulse Power Dissipation (W) 5000
  • Supplier Temperature Grade N/A
  • Test Current (mA) 1
  • Tradename N/A

Więcej informacji

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Main description Diode TVS Single Bi-Dir 150V 5KW 2-Pin Case D-6