BZW04-5V8B

ProducentChangzhou Galaxy Century Microelectronics Co.
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BZW04-5V8B_CHANGZHOU_GALAXY_CENTURY_MICROELECTRONICS_CO.,LTD
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Opis / BZW04-5V8B

Diode TVS Single Bi-Dir 5.8V 400W 2-Pin DO-41

Informacje podstawowe

  • ProducentChangzhou Galaxy Century Microelectronics Co.,Ltd
  • EURoHSYes (2002/95/EC)
  • Automotive No

Informacje dodatkowe

  • Crosses 617
  • PCNs 1
  • MaskPart BZW045V8B%
  • IntroductionDate Jun 18, 2003

Parametry

  • Configuration Single
  • Direction Type Bi-Directional
  • Maximum Clamping Voltage (V) 15.6
  • Maximum Operating Temperature (°C) 150
  • Maximum Peak Pulse Current (A) 38
  • Maximum Reverse Leakage Current (uA) 2000
  • Maximum Reverse Stand-Off Voltage (V) 5.8
  • Minimum Breakdown Voltage (V) 6.45
  • Minimum Operating Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -55 to 150
  • Peak Pulse Power Dissipation (W) 400(Min)
  • Supplier Temperature Grade N/A
  • Test Current (mA) 10

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Main description Diode TVS Single Bi-Dir 5.8V 400W 2-Pin DO-41