AP2306GN-HF-3TR

ProducentAdvanced Power ElectronicsEURoHSYes (2002/95/EC)Automotive Unknown.
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AP2306GN-HF-3TR_ADVANCED_POWER_ELECTRONICS
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Opis / AP2306GN-HF-3TR

Trans MOSFET N-CH 20V 5.3A 3-Pin SOT-23 T/R

Informacje podstawowe

  • ProducentAdvanced Power Electronics
  • EURoHSYes (2002/95/EC)
  • Automotive Unknown

Informacje dodatkowe

  • Crosses 28
  • MaskPart AP2306GNHF3%

Parametry

  • Category Power MOSFET
  • Channel Mode Enhancement
  • Channel Type N
  • Configuration Single
  • Material N/A
  • Maximum Continuous Drain Current (A) 5.3
  • Maximum Drain Source Resistance (mOhm) 30@10V
  • Maximum Drain Source Voltage (V) 20
  • Maximum Gate Source Leakage Current (nA) 100
  • Maximum Gate Source Voltage (V) ±12
  • Maximum Gate Threshold Voltage (V) 1.25
  • Maximum IDSS (uA) 1
  • Maximum Operating Temperature (°C) 150
  • Maximum Power Dissipation (mW) 1380
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Process Technology N/A
  • Supplier Temperature Grade N/A
  • Typical Fall Time (ns) 2.8
  • Typical Gate Charge @ 10V (nC) N/A
  • Typical Gate Charge @ Vgs (nC) 8.7@4.5V
  • Typical Input Capacitance @ Vds (pF) 603@15V
  • Typical Rise Time (ns) 14
  • Typical Turn-Off Delay Time (ns) 18.4
  • Typical Turn-On Delay Time (ns) 6

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Main description Trans MOSFET N-CH 20V 5.3A 3-Pin SOT-23 T/R