74LVC1G00SE-7

ProducentDiodes IncorporatedEURoHSYes (2011/65/EU, 2015/863)Automotive No.
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74LVC1G00SE-7_DIODES_INCORPORATED
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Opis / 74LVC1G00SE-7

NAND Gate 1-Element 2-IN CMOS 5-Pin SOT-353 T/R

Informacje podstawowe

  • ProducentDiodes Incorporated
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 49
  • Inventory 5
  • PCNs 16
  • GIDEP-Alerts 1
  • MaskPart 74LVC1G00SE%
  • IntroductionDate May 20, 2010

Parametry

  • Absolute Propagation Delay Time (ns) 10.5
  • Input Type N/A
  • Logic Family LVC
  • Logic Function NAND
  • Maximum High Level Output Current (mA) -32
  • Maximum Low Level Output Current (mA) 32
  • Maximum Operating Supply Voltage (V) 5.5
  • Maximum Operating Temperature (°C) 125
  • Maximum Propagation Delay Time @ Maximum CL (ns) 7.5@2.7V|6@3.3V|5.5@5V
  • Maximum Quiescent Current (uA) 200
  • Maximum Storage Temperature (°C) 150
  • Maximum Supply Current (mA) N/A
  • Minimum Operating Supply Voltage (V) 1.65
  • Minimum Operating Temperature (°C) -40
  • Minimum Storage Temperature (°C) -65
  • Number of Element Inputs 2-IN
  • Number of Element Outputs 1
  • Number of Elements per Chip 1
  • Number of Output Enables per Element 0
  • Number of Selection Inputs per Element 0
  • Output Type N/A
  • Process Technology CMOS
  • Propagation Delay Test Condition (pF) 50
  • Supplier Temperature Grade N/A
  • Typical Operating Supply Voltage (V) 1.8|2.5|3.3|5
  • Typical Quiescent Current (uA) N/A
  • Typical Supply Current (mA) N/A

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Main description NAND Gate 1-Element 2-IN CMOS 5-Pin SOT-353 T/R