1N5819RLG

ProducentON SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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SKU
1N5819RLG_ON_SEMICONDUCTOR
material
Si
0,00 zł

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Opis / 1N5819RLG

Diode Schottky Si 40V 1A 2-Pin DO-41 T/R

Informacje podstawowe

  • ProducentON Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 498
  • Inventory 8
  • PCNs 27
  • MaskPart 1N5819%G
  • IntroductionDate May 06, 1997
  • SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=1N5819RLG&tabbed=Y&clearFilters=Y&searchType=others

Parametry

  • Configuration Single
  • Material Si
  • Maximum Continuous Forward Current (A) 1@Ta=55C
  • Maximum DC Reverse Voltage (V) 40
  • Maximum Junction Ambient Thermal Resistance 80°C/W
  • Maximum Junction Case Thermal Resistance N/A
  • Maximum Operating Temperature (°C) 125
  • Maximum Power Dissipation (mW) N/A
  • Maximum Storage Temperature (°C) 125
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Operating Junction Temperature (°C) -65 to 125
  • Peak Forward Voltage (V) 0.9@3A
  • Peak Non-Repetitive Surge Current (A) 25
  • Peak Reverse Current (uA) 1000
  • Peak Reverse Recovery Time (ns) N/A
  • Peak Reverse Repetitive Voltage (V) 40
  • Supplier Temperature Grade N/A
  • Type Schottky Diode
  • Typical Forward Voltage @ 0 Current (V) 0.23
  • Typical Forward Voltage @ Full Rated Current (V) 0.42
  • Typical Junction Capacitance (pF) N/A
  • Typical Reverse Recovery Charge (nC) N/A

Więcej informacji

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Main description Diode Schottky Si 40V 1A 2-Pin DO-41 T/R