1N5818

ProducentTaiwan SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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1N5818_TAIWAN_SEMICONDUCTOR
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Opis / 1N5818

Diode Schottky 30V 1A 2-Pin DO-41

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 260
  • Inventory 3
  • PCNs 4
  • MaskPart 1N5818%
  • IntroductionDate May 09, 2000

Parametry

  • Configuration Single
  • Maximum Continuous Forward Current (A) 1
  • Maximum Junction Ambient Thermal Resistance 100°C/W(Typ)
  • Maximum Junction Case Thermal Resistance 45°C/W(Typ)
  • Maximum Operating Temperature (°C) 125
  • Maximum Power Dissipation (mW) N/A
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Temperature (°C) -65
  • Minimum Storage Temperature (°C) -65
  • Operating Junction Temperature (°C) -65 to 125
  • Peak Forward Voltage (V) 0.55
  • Peak Non-Repetitive Surge Current (A) 30
  • Peak Reverse Current (uA) 1000
  • Peak Reverse Recovery Time (ns) N/A
  • Peak Reverse Repetitive Voltage (V) 30
  • Supplier Temperature Grade N/A
  • Type Schottky Diode
  • Typical Forward Voltage @ 0 Current (V) 0.35
  • Typical Forward Voltage @ Full Rated Current (V) 0.5
  • Typical Junction Capacitance (pF) 55
  • Typical Reverse Recovery Charge (nC) N/A

Więcej informacji

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Main description Diode Schottky 30V 1A 2-Pin DO-41