1N5817 B0G

ProducentTaiwan SemiconductorEURoHSYes with Exemption (2011/65/EU, 2015/863)Automotive No.
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1N5817_B0G_TAIWAN_SEMICONDUCTOR
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Opis / 1N5817 B0G

Diode Schottky 20V 1A 2-Pin DO-41 Bulk

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 246
  • Inventory 4*
  • MaskPart 1N5817%G

Parametry

  • Configuration Single
  • Maximum Continuous Forward Current (A) 1
  • Maximum Junction Ambient Thermal Resistance 100°C/W(Typ)
  • Maximum Junction Case Thermal Resistance 45°C/W(Typ)
  • Maximum Operating Temperature (°C) 125
  • Maximum Power Dissipation (mW) N/A
  • Maximum Storage Temperature (°C) 125
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Operating Junction Temperature (°C) -55 to 125
  • Peak Forward Voltage (V) 0.45
  • Peak Non-Repetitive Surge Current (A) 30
  • Peak Reverse Current (uA) 1000
  • Peak Reverse Recovery Time (ns) N/A
  • Peak Reverse Repetitive Voltage (V) 20
  • Supplier Temperature Grade N/A
  • Type Schottky Diode
  • Typical Forward Voltage @ 0 Current (V) 0.1
  • Typical Forward Voltage @ Full Rated Current (V) 0.35
  • Typical Junction Capacitance (pF) 55
  • Typical Reverse Recovery Charge (nC) N/A

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Main description Diode Schottky 20V 1A 2-Pin DO-41 Bulk